Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

Abstract

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 mu m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAs/GaAsP barrier layers and, to a lesser extent, to Auger recombination. (c) 2006 American Institute of Physics.

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