Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers
Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, SQ and Zhang, YH (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPL PHYS LETT, 89 (17), 173509. ? - ?.
In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 mu m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAs/GaAsP barrier layers and, to a lesser extent, to Auger recombination. (c) 2006 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||23 October 2006|
|Identification Number :||10.1063/1.2369649|
|Uncontrolled Keywords :||SEMICONDUCTOR DIODE-LASERS, PRESSURE-DEPENDENCE, DOT LASERS, BAND OFFSETS, BOUND-STATES, OPERATION|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:09|
|Last Modified :||23 Sep 2013 18:28|
Actions (login required)
Downloads per month over past year