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Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers

Hild, K, Sweeney, SJ, Wright, S, Lock, DA, Jin, SR, Marko, IP, Johnson, SR, Chaparro, SA, Yu, SQ and Zhang, YH (2006) Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers APPL PHYS LETT, 89 (17). ? - ?. ISSN 0003-6951

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Abstract

In this letter the authors present a comprehensive study of the threshold current and its temperature dependence in GaAsSb-based quantum well edge-emitting lasers for emission at 1.3 mu m. It is found that at room temperature, the threshold current is dominated by nonradiative recombination accounting for more than 90% of the total threshold current density. From high hydrostatic pressure dependence measurements, a strong increase in threshold current with pressure is observed, suggesting that the nonradiative recombination process may be attributed to electron overflow into the GaAs/GaAsP barrier layers and, to a lesser extent, to Auger recombination. (c) 2006 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: SEMICONDUCTOR DIODE-LASERS, PRESSURE-DEPENDENCE, DOT LASERS, BAND OFFSETS, BOUND-STATES, OPERATION
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/443

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