Photoluminescence Spectroscopy of Bandgap Reduction in Dilute InNAs Alloys
Tools
Tools
Tools
Veal, T D, Piper, L F, Jefferson, P H, Mahboob, I, McConville, C F, Merrick, M, Hosea, T J, Murdin, B N and Hopkinson, M (2005) Photoluminescence Spectroscopy of Bandgap Reduction in Dilute InNAs Alloys Applied Physics Letters, 87 (18). ISSN 00036951
![[img]](/style/images/fileicons/application_pdf.png)
| PDF 336Kb |
Abstract
Photoluminescence (PL) has been observed from dilute InNxAs1-x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5x5) k center dot p Hamiltonian.
| Item Type: | Article |
|---|---|
| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 87, Iss. 18. Copyright 2005 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 432 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:09 |
| Last Modified: | 25 Apr 2013 12:43 |
Document Downloads
Repository Staff Only: item control page