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Photoluminescence Spectroscopy of Bandgap Reduction in Dilute InNAs Alloys

Veal, T D, Piper, L F, Jefferson, P H, Mahboob, I, McConville, C F, Merrick, M, Hosea, T J, Murdin, B N and Hopkinson, M (2005) Photoluminescence Spectroscopy of Bandgap Reduction in Dilute InNAs Alloys Applied Physics Letters, 87 (18).


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Photoluminescence (PL) has been observed from dilute InNxAs1-x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5x5) k center dot p Hamiltonian.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
Veal, T D
Piper, L F
Jefferson, P H
Mahboob, I
McConville, C F
Merrick, M
Hosea, T
Murdin, B
Hopkinson, M
Date : 1 January 2005
Identification Number : 10.1063/1.2126117
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 87, Iss. 18. Copyright 2005 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 19 Jun 2018 06:02

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