Photoluminescence Spectroscopy of Bandgap Reduction in Dilute InNAs Alloys
Veal, T D, Piper, L F, Jefferson, P H, Mahboob, I, McConville, C F, Merrick, M, Hosea, T J, Murdin, B N and Hopkinson, M (2005) Photoluminescence Spectroscopy of Bandgap Reduction in Dilute InNAs Alloys Applied Physics Letters, 87 (18).
Photoluminescence (PL) has been observed from dilute InNxAs1-x epilayers grown by molecular-beam epitaxy. The PL spectra unambiguously show band gap reduction with increasing N content. The variation of the PL spectra with temperature is indicative of carrier detrapping from localized to extended states as the temperature is increased. The redshift of the free exciton PL peak with increasing N content and temperature is reproduced by the band anticrossing model, implemented via a (5x5) k center dot p Hamiltonian.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2005|
|Identification Number :||https://doi.org/10.1063/1.2126117|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 87, Iss. 18. Copyright 2005 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:09|
|Last Modified :||23 Sep 2013 18:28|
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