University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band

Lourenco, MA, Gwilliam, RM and Homewood, KP (2008) Silicon light emitting diodes emitting over the 1.2-1.4 mu m wavelength region in the extended optical communication band APPLIED PHYSICS LETTERS, 92 (16). ? - ?. ISSN 0003-6951

[img]
Preview
PDF
fulltext.pdf

Download (80Kb)

Abstract

Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2-1.35 mu m range. This is achieved by the implantation of the rare earth thulium, incorporated in the trivalent Tm3+ state, into silicon p-n junctions. Light emitting diodes operating under forward bias have been obtained by codoping of boron to reduce the thermal quenching. Seven sharp lines are observed, corresponding to known internal Tm3+ transitions in the manifold from the H-3(5) to the H-3(6) ground states. This center, together with the basic 1.15 mu m silicon emitters and Si:Er devices operating at 1.54 mu m, now enables significant coverage of the extended (1.1-1.8 mu m) optical communications band in silicon.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, III-V-SEMICONDUCTORS, LUMINESCENCE, THULIUM, ERBIUM
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/428

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800