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Demonstration of an amorphous carbon tunnel diode

Bhattacharyya, S and Silva, SRP (2007) Demonstration of an amorphous carbon tunnel diode APPLIED PHYSICS LETTERS, 90 (8). ? - ?. ISSN 0003-6951


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Negative differential conductance in metal/amorphous nitrogenated carbon (a-CNx)/Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx/Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunneling effective mass of about 0.06 times the free electron mass, a coherence length of similar to 10 nm in these thin a-CNx layers and a low interface trap density suggest fast device operation similar to classical tunnel diodes. (c) 2007 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, THIN-FILMS, ELECTRONIC-PROPERTIES, DIAMOND, HETEROJUNCTIONS, TRANSPORT
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 23 Sep 2013 18:28

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