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Fluorine-vacancy complexes in ultrashallow B-implanted Si

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Abdulmalik, DAUNSPECIFIED
Coleman, PGUNSPECIFIED
Cowern, NEBUNSPECIFIED
Smith, AJUNSPECIFIED
Sealy, BJUNSPECIFIED
Lerch, WUNSPECIFIED
Paul, SUNSPECIFIED
Cristiano, FUNSPECIFIED
Date : 31 July 2006
Identification Number : 10.1063/1.2335594
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, BORON THERMAL-DIFFUSION, SILICON, DEFECTS
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 17 Jan 2015 14:50
URI: http://epubs.surrey.ac.uk/id/eprint/416

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