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Fluorine-vacancy complexes in ultrashallow B-implanted Si

Abdulmalik, DA, Coleman, PG, Cowern, NEB, Smith, AJ, Sealy, BJ, Lerch, W, Paul, S and Cristiano, F (2006) Fluorine-vacancy complexes in ultrashallow B-implanted Si APPLIED PHYSICS LETTERS, 89 (5). ? - ?. ISSN 0003-6951


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Shallow fluorine-vacancy (FV) complexes in Si have been directly observed using variable-energy positron annihilation spectroscopy and secondary ion mass spectrometry. The FV complexes, introduced to combat the deactivation and transient-enhanced diffusion of ultrashallow boron, were observed in preamorphized Si wafers implanted with 0.5 keV B and 10 keV F ions at a dose of 10(15) cm(-2), and then annealed isothermally at 800 degrees C for times ranging from 1 to 2700 s. The results are in agreement with a model which predicts that the complexes are of the form F3nVn, with n most probably being 1 and/or 2.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, BORON THERMAL-DIFFUSION, SILICON, DEFECTS
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 23 Sep 2013 18:28

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