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Temperature and Doping Dependence of Spin Relaxation in n-InAs

Murdin, B N, Litvinenko, K, Allam, J, Pidgeon, C R, Bird, M, Morrison, K, Zhang, T, Clowes, S K, Branford, W R, Harris, J and Cohen, L F (2005) Temperature and Doping Dependence of Spin Relaxation in n-InAs Physical Review B, 72 (8). ISSN 1098-0121


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We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in the narrow gap semiconductor material n-InAs as a function of temperature, doping, and pump wavelength. The results are consistent with the D'Yakonov-Perel mechanism for temperatures between 77 and 300 K. However, the data suggest that electron-electron scattering should be taken into account in determining the dependence of the spin lifetime on the carrier concentration in the range 5.2x10(16)-8.8x10(17) cm(-3). For a sample with doping of 1.22x10(17) cm(-3) the spin lifetime was 24 ps at room temperature. By applying a magnetic field in the sample plane we also observed coherent precession of the spins in the time domain, with a g factor g(*)=-13, also at room temperature.

Item Type: Article
Additional Information: Published in <i>Physical Review B,</i> Vol. 72, Iss. 8. Copyright 2005 American Physical Society. Click <a href=>here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 23 Sep 2013 18:28

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