University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Temperature and Doping Dependence of Spin Relaxation in n-InAs

Murdin, B N, Litvinenko, K, Allam, J, Pidgeon, C R, Bird, M, Morrison, K, Zhang, T, Clowes, S K, Branford, W R, Harris, J and Cohen, L F (2005) Temperature and Doping Dependence of Spin Relaxation in n-InAs Physical Review B, 72 (8).


Download (88kB)


We have used time-resolved spectroscopy to measure the relaxation of spin polarizations in the narrow gap semiconductor material n-InAs as a function of temperature, doping, and pump wavelength. The results are consistent with the D'Yakonov-Perel mechanism for temperatures between 77 and 300 K. However, the data suggest that electron-electron scattering should be taken into account in determining the dependence of the spin lifetime on the carrier concentration in the range 5.2x10(16)-8.8x10(17) cm(-3). For a sample with doping of 1.22x10(17) cm(-3) the spin lifetime was 24 ps at room temperature. By applying a magnetic field in the sample plane we also observed coherent precession of the spins in the time domain, with a g factor g(*)=-13, also at room temperature.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
Murdin, B
Pidgeon, C R
Bird, M
Morrison, K
Zhang, T
Clowes, S
Branford, W R
Harris, J
Cohen, L F
Date : 1 January 2005
DOI : 10.1103/PhysRevB.72.085346
Additional Information : Published in <i>Physical Review B,</i> Vol. 72, Iss. 8. Copyright 2005 American Physical Society. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 06 Jul 2019 05:06

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800