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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Hamilton, JJ, Kirkby, KJ, Cowern, NEB, Collart, EJH, Bersani, M, Giubertoni, D, Gennaro, S and Parisini, A (2007) Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink APPLIED PHYSICS LETTERS, 91 (9). ? - ?. ISSN 0003-6951

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Abstract

Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface to minimize interstitials while leaving a single-crystal seed to support solid-phase epitaxy. Results support the idea that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Hamilton, JJUNSPECIFIED
Kirkby, KJUNSPECIFIED
Cowern, NEBUNSPECIFIED
Collart, EJHUNSPECIFIED
Bersani, MUNSPECIFIED
Giubertoni, DUNSPECIFIED
Gennaro, SUNSPECIFIED
Parisini, AUNSPECIFIED
Date : 27 August 2007
Identification Number : 10.1063/1.2778749
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, IMPLANTS, SOI
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/408

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