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Solid Phase Epitaxy in Uniaxially Stressed (001) Si

Rudawski, N G, Jones, K S and Gwilliam, R (2007) Solid Phase Epitaxy in Uniaxially Stressed (001) Si Applied Physics Letters, 91 (17).


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The effect of [110] uniaxial stresses up to 1.5 GPa on defect nucleation during solid phase epitaxy of amorphous (001) Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both compression and tension resulted in an increase in regrowth defects compared to the stress- free case. The defects in compression appear to arise from roughening of the crystallizing interface whereas in tension it is proposed that reorientation of crystallites near the initial amorphous/crystalline interface is responsible for defect formation.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
Rudawski, N G
Jones, K S
Date : 1 January 2007
DOI : 10.1063/1.2801518
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 91, Iss. 17. Copyright 2007 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:08
Last Modified : 16 Jan 2019 16:19

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