University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Solid Phase Epitaxy in Uniaxially Stressed (001) Si

Rudawski, N G, Jones, K S and Gwilliam, R (2007) Solid Phase Epitaxy in Uniaxially Stressed (001) Si Applied Physics Letters, 91 (17). ISSN 00036951

[img]
Preview
PDF
fulltext.pdf

Download (155Kb)

Abstract

The effect of [110] uniaxial stresses up to 1.5 GPa on defect nucleation during solid phase epitaxy of amorphous (001) Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both compression and tension resulted in an increase in regrowth defects compared to the stress- free case. The defects in compression appear to arise from roughening of the crystallizing interface whereas in tension it is proposed that reorientation of crystallites near the initial amorphous/crystalline interface is responsible for defect formation.

Item Type: Article
Additional Information: Published in <i>Applied Physics Letters,</i> Vol. 91, Iss. 17. Copyright 2007 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/403

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800