Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers
Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21), ARTN 2.
The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences between the devices arise due to the trapped holes in the p-doped devices. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. The model explains the high T-0 values observed near room temperature. (c) 2005 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||21 November 2005|
|Identification Number :||https://doi.org/10.1063/1.2135204|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, ACTIVE-REGION, DEPENDENCE, AMPLIFIERS, PRESSURE|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:08|
|Last Modified :||23 Sep 2013 18:28|
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