University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers

Marko, IP, Masse, NF, Sweeney, SJ, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2005) Carrier transport and recombination in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum-dot lasers APPLIED PHYSICS LETTERS, 87 (21). ? - ?. ISSN 0003-6951

[img]
Preview
PDF
fulltext.pdf

Download (323Kb)

Abstract

The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences between the devices arise due to the trapped holes in the p-doped devices. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. The model explains the high T-0 values observed near room temperature. (c) 2005 American Institute of Physics.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, ACTIVE-REGION, DEPENDENCE, AMPLIFIERS, PRESSURE
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/402

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800