Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering
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Katsuno, T, Nitta, S, Habuchi, H, Stolojan, V and Silva, SRP (2004) Highly photoconductive amorphous carbon nitride films prepared by cyclic nitrogen radical sputtering APPLIED PHYSICS LETTERS, 85 (14). 2803 - 2805. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.1792384
Abstract
We report on the growth of amorphous carbon nitride films (a-CNx) showing the highest conductivity to date. The films were prepared using a layer-by-layer method (a-CNx:LL), by the cyclical nitrogen radical sputtering of a graphite radical, alternated with a brief hydrogen etch. The photosensitivity S of these films is 10(5), defined as the ratio of the photoconductivity sigma(p) to the dark conductivity sigma(d) and is the highest value reported thus far. We believe that the carriers generated by the monochromatic light (photon energy 6.2 eV) in the a-CNx:LL films are primarily electrons, with the photoconductivity shown to increase with substrate deposition temperature.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, HYDROGENATED CARBON, ELECTROLUMINESCENCE, LUMINESCENCE, ALLOYS |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| Related URLs: | |
| ID Code: | 4 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:05 |
| Last Modified: | 30 Mar 2013 14:38 |
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