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Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10), ARTN 1.


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We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (lambda=890nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
Chamings, J
Adams, AR
Sweeney, SJ
Kunert, B
Volz, K
Stolz, W
Date : 8 September 2008
DOI : 10.1063/1.2975845
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, QUANTUM-WELL LASERS, GAINNAS ALLOYS, RECOMBINATION, PERFORMANCE, EPITAXY, AUGER
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:08
Last Modified : 31 Oct 2017 13:58

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