Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures
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Orwa, JO, Shannon, JM, Gateru, RG and Silva, SRP (2005) Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures JOURNAL OF APPLIED PHYSICS, 97 (2), ARTN 0.
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| Item Type: | Article | |||||||||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre | |||||||||||||||
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| Date : | 15 January 2005 | |||||||||||||||
| DOI : | 10.1063/1.1834710 | |||||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DEFECT-POOL MODEL, DAMAGE, FILMS | |||||||||||||||
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| Depositing User : | Mr Adam Field | |||||||||||||||
| Date Deposited : | 27 May 2010 14:08 | |||||||||||||||
| Last Modified : | 31 Oct 2017 13:58 | |||||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/394 |
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