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Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

Orwa, JO, Shannon, JM, Gateru, RG and Silva, SRP (2005) Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures JOURNAL OF APPLIED PHYSICS, 97 (2). ? - ?. ISSN 0021-8979

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmail
Orwa, JOUNSPECIFIED
Shannon, JMUNSPECIFIED
Gateru, RGUNSPECIFIED
Silva, SRPUNSPECIFIED
Date : 15 January 2005
Identification Number : 10.1063/1.1834710
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DEFECT-POOL MODEL, DAMAGE, FILMS
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:08
Last Modified : 17 Jan 2015 14:53
URI: http://epubs.surrey.ac.uk/id/eprint/394

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