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Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

Orwa, JO, Shannon, JM, Gateru, RG and Silva, SRP (2005) Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures JOURNAL OF APPLIED PHYSICS, 97 (2). ? - ?. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DEFECT-POOL MODEL, DAMAGE, FILMS
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 09 Jun 2014 13:28
URI: http://epubs.surrey.ac.uk/id/eprint/394

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