Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

Orwa, JO, Shannon, JM, Gateru, RG and Silva, SRP (2005) Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures JOURNAL OF APPLIED PHYSICS, 97 (2), ARTN 0.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Authors Email ORCID Orwa, JO UNSPECIFIED UNSPECIFIED Shannon, JM UNSPECIFIED UNSPECIFIED Gateru, RG UNSPECIFIED UNSPECIFIED Silva, SRP UNSPECIFIED UNSPECIFIED
Date :	15 January 2005
Identification Number :	10.1063/1.1834710
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DEFECT-POOL MODEL, DAMAGE, FILMS
Related URLs :	Author
Depositing User :	Mr Adam Field
Date Deposited :	27 May 2010 14:08
Last Modified :	17 Jan 2015 14:53
URI:	http://epubs.surrey.ac.uk/id/eprint/394

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