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Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal

Christmas, UME, Faux, DA and Cowern, NEB (2007) Elastic interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal PHYSICAL REVIEW B, 76 (20). ? - ?. ISSN 1098-0121

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Abstract

The strain interaction energy between a silicon interstitial and a carbon substitutional in a silicon crystal was modeled by a continuum Green's function method and by atomistic simulation. The interaction energy is proportional to d(-3), where d is separation distance between the defects. The pair interaction energy was found to be less than 0.04 meV for d > 6 nm increasing to more than about 0.1 meV for d < 3 nm. The energies are unlikely to influence the diffusional behavior of the defects except at distances of one or two unit cells. The potential between the point defects is repulsive if they are oriented along the (100) crystal axis, but attractive if they are positioned along (110) or (111).

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, POINT-DEFECTS, ANISOTROPIC ELASTICITY, GREENS-FUNCTIONS, QUANTUM DOTS, DIFFUSION, POTENTIALS, MECHANISMS, SIMULATION, STRAIN, BORON
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Theory and Computation
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 23 Sep 2013 18:27
URI: http://epubs.surrey.ac.uk/id/eprint/386

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