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GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers

Yin, M, Nash, G R, Coomber, S D, Buckle, L, Carrington, P J, Krier, A, Andreev, A, Przeslak, S J, de Valicourt, G, Smith, S J , Emeny, M T and Ashley, T (2008) GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers Applied Physics Letters, 93 (12).


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Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
Yin, M
Nash, G R
Coomber, S D
Buckle, L
Carrington, P J
Krier, A
Przeslak, S J
de Valicourt, G
Smith, S J
Emeny, M T
Ashley, T
Date : 1 January 2008
DOI : 10.1063/1.2990224
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 93, Iss. 12. Copyright 2008 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:08
Last Modified : 16 Jan 2019 16:19

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