GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers
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Yin, M, Nash, G R, Coomber, S D, Buckle, L, Carrington, P J, Krier, A, Andreev, A, Przeslak, S J, de Valicourt, G, Smith, S J, Emeny, M T and Ashley, T (2008) GaInSb/AlInSb Multi-Quantum-Wells for Mid-Infrared Lasers Applied Physics Letters, 93 (12). ISSN 00036951
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Abstract
Photoluminescence (PL) from GaInSb/AlInSb type I multi-quantum-wells, grown on GaAs, has been investigated as a function of strain in the quantum wells. Luminescence, between 3 and 4 mu m, was observed for all samples, with good agreement between the measured and calculated peak emission energies. Analysis of the temperature dependence of the luminescence suggests that population of excited quantum well hole subbands occurs at high temperature, leading to a reduction in the PL signal. Room temperature luminescence was obtained from a sample with similar to 0.8% strain in the quantum wells. Preliminary results from laser diodes fabricated from companion wafers indicate lasing up to 220 K
| Item Type: | Article |
|---|---|
| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 93, Iss. 12. Copyright 2008 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 384 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:08 |
| Last Modified: | 21 Sep 2012 14:58 |
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