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Interface properties of Pb/InAs planar structures for Andreev spectroscopy

Magnus, F, Yates, KA, Clowes, SK, Miyoshi, Y, Bugoslavsky, Y, Cohen, LF, Aziz, A, Burnell, G, Blamire, MG and Josephs-Franks, PW (2008) Interface properties of Pb/InAs planar structures for Andreev spectroscopy APPLIED PHYSICS LETTERS, 92 (1). ? - ?. ISSN 0003-6951

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Abstract

For Andreev spectroscopy to be a useful tool to detect spin accumulation in semiconductors, we show by simulation that there is a maximum value for the interface scattering parameter that can be tolerated. Three different fabrication routes for Pb/InAs planar junctions are explored and we find that the "etch-back" processing strategy is the most promising. Using the parameters extracted from the spectroscopic analysis, we find that the interface properties fall into four different regimes of behavior.

Item Type:Article
Uncontrolled Keywords:Science & Technology, Physical Sciences, Physics, Applied, Physics, SUPERCONDUCTOR-SEMICONDUCTOR CONTACTS, SPIN POLARIZATION, JUNCTIONS, FILMS
Divisions:Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
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ID Code:378
Deposited By:Mr Adam Field
Deposited On:27 May 2010 15:08
Last Modified:16 Feb 2013 16:47

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