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Ion Beam Induced Charge Studies of CdZnTe Grown by Modified Vertical Bridgman Method

Veale, MC, Sellin, PJ, Parkin, J, Lohstroh, A, Davies, AW and Seller, P (2008) Ion Beam Induced Charge Studies of CdZnTe Grown by Modified Vertical Bridgman Method IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55 (6). 3741 - 3745. ISSN 0018-9499

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Abstract

Ion Beam Induced Charge (IBIC) and time resolved digital IBIC techniques have been used to map the electronic properties of CdZnTe manufactured by Yinnel Tech Inc. The 2 MeV proton scanning microbeam at the University of Surrey Ion Beam Centre was used to map the charge transport properties of both holes and electrons at room temperature. The electron response of the detector showed good uniformity whereas the hole response showed significant variations across the bulk.

Item Type:Article
Uncontrolled Keywords:Science & Technology, Technology, Engineering, Electrical & Electronic, Nuclear Science & Technology, Engineering, CdZnTe, charge transport properties, digital pulse processing, IBIC, trapping, TRANSPORT, CRYSTALS
Divisions:Faculty of Engineering and Physical Sciences > Physics
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ID Code:369
Deposited By:Mr Adam Field
Deposited On:27 May 2010 15:08
Last Modified:01 Apr 2013 14:57

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