Source-Gated Transistors in Poly-Silicon
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Shannon, J M, Dovinos, D, Balon, F, Glasse, C and Brotherton, S D (2005) Source-Gated Transistors in Poly-Silicon IEEE Electron Device Letters, 26 (10). ISSN 0741-3106
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Abstract
Source-gated transistors (SGTs) have been made in thin layers of polysilicon formed by excimer laser crystallization of amorphous silicon. It is shown that the main features of the SGT, namely a low saturation voltage and high output impedance can be obtained in poly-silicon. Furthermore the nature of the source barrier enabled it to be pulled down by the influence of the gate to low values giving small activation energies for current transport and reduced temperature sensitivity in the on-state.
| Item Type: | Article |
|---|---|
| Additional Information: | Published in <i>Electron Device Letters,</i> Vol. 26, Iss. 10. Copyright 2005 IEEE. Click <a href=http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre |
| ID Code: | 368 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:08 |
| Last Modified: | 21 Sep 2012 15:23 |
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