Oblique Hanle measurements of InAs/GaAs quantum dot spin-light emitting diodes
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Itskos, G, Harbord, E, Clowes, SK, Clarke, E, Cohen, LF, Murray, R, Van Dorpe, P and Van Roy, W (2006) Oblique Hanle measurements of InAs/GaAs quantum dot spin-light emitting diodes APPLIED PHYSICS LETTERS, 88 (2). ? - ?. ISSN 0003-6951
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Abstract
We report on studies of electrical spin injection from ferromagnetic Fe contacts into semiconductor light emitting diodes containing single layers of InAs/GaAs self-assembled quantum dots (QDs). An oblique magnetic field is used to manipulate the spin of the injected electrons in the semiconductor. This approach allows us to measure the injected steady-state spin polarization in the QDs, P-spin as well as estimate the spin losses in the QD spin detector. After subtraction of magneto-optical effects not related to spin injection, we measured a P-spin of 7.5% at 15 K and estimated an injected spin polarization before QD recombination of around 20%.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, INJECTION, BARRIER |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| Related URLs: | |
| ID Code: | 350 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:08 |
| Last Modified: | 11 May 2013 14:48 |
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