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Oblique Hanle measurements of InAs/GaAs quantum dot spin-light emitting diodes

Itskos, G, Harbord, E, Clowes, SK, Clarke, E, Cohen, LF, Murray, R, Van Dorpe, P and Van Roy, W (2006) Oblique Hanle measurements of InAs/GaAs quantum dot spin-light emitting diodes APPLIED PHYSICS LETTERS, 88 (2). ? - ?. ISSN 0003-6951

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Abstract

We report on studies of electrical spin injection from ferromagnetic Fe contacts into semiconductor light emitting diodes containing single layers of InAs/GaAs self-assembled quantum dots (QDs). An oblique magnetic field is used to manipulate the spin of the injected electrons in the semiconductor. This approach allows us to measure the injected steady-state spin polarization in the QDs, P-spin as well as estimate the spin losses in the QD spin detector. After subtraction of magneto-optical effects not related to spin injection, we measured a P-spin of 7.5% at 15 K and estimated an injected spin polarization before QD recombination of around 20%.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, INJECTION, BARRIER
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 23 Sep 2013 18:27
URI: http://epubs.surrey.ac.uk/id/eprint/350

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