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Effect of Fluorine Implantation Dose on Boron Thermal Diffusion in Silicon

El Mubarek, H A, Bonar, J M, Dilliway, G D, Ashburn, P, Karunaratne, M, Willoughby, A F, Wang, Y, Hemment, P L, Price, R, Zhang, J and Ward, P (2004) Effect of Fluorine Implantation Dose on Boron Thermal Diffusion in Silicon Journal of Applied Physics, 96 (8).


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This paper investigates how the thermal diffusion of boron in silicon is influenced by a high energy fluorine implant with a dose in the range 5x10(14)-2.3x10(15) cm(-2). Secondary Ion Mass Spectroscopy (SIMS) profiles of boron marker layers are presented for different fluorine doses and compared with fluorine profiles to establish the conditions under which thermal boron diffusion is suppressed. The (SIMS) profiles show significantly reduced boron thermal diffusion above a critical F+ dose of 0.9-1.4x10(15) cm(-2). Fitting of the measured boron profiles gives suppressions of the boron thermal diffusion coefficient by factors of 1.9 and 3.7 for F+ implantation doses of 1.4x10(15) and 2.3x10(15) cm(-2), respectively. The suppression of boron thermal diffusion above the critical fluorine dose correlates with the appearance of a shallow fluorine peak on the (SIMS) profile in the vicinity of the boron marker layer. This shallow fluorine peak is present in samples with and without boron marker layers, and hence it is not due to a chemical interaction between the boron and the fluorine. Analysis of the (SIMS) profiles and cross-section Transmission Electron Microscope micrographs suggests that it is due to the trapping of fluorine at vacancy-fluorine clusters, and that the suppression of the boron thermal diffusion is due to the effect of the clusters in suppressing the interstitial concentration in the vicinity of the boron profile

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
El Mubarek, H A
Bonar, J M
Dilliway, G D
Ashburn, P
Karunaratne, M
Willoughby, A F
Wang, Y
Hemment, P L
Price, R
Zhang, J
Ward, P
Date : 1 January 2004
DOI : 10.1063/1.1790063
Additional Information : Published in <i>Journal of Applied Physics,</i> Vol. 96, Iss. 8. Copyright 2004 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:05
Last Modified : 31 Oct 2017 13:56

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