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Calculation of electric field and optical transitions in InGaN/GaN quantum wells

Christmas, UME, Andreev, AD and Faux, DA (2005) Calculation of electric field and optical transitions in InGaN/GaN quantum wells JOURNAL OF APPLIED PHYSICS, 98 (7). ? - ?. ISSN 0021-8979

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, III-V NITRIDES, GALLIUM NITRIDE, PIEZOELECTRIC COEFFICIENT, ELASTIC-CONSTANTS, THIN-FILMS, ALUMINUM NITRIDE, GAN, POLARIZATION, ALN, 1ST-PRINCIPLES
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Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 06 Jul 2014 01:33
URI: http://epubs.surrey.ac.uk/id/eprint/343

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