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Calculation of electric field and optical transitions in InGaN/GaN quantum wells

Christmas, UME, Andreev, AD and Faux, DA (2005) Calculation of electric field and optical transitions in InGaN/GaN quantum wells JOURNAL OF APPLIED PHYSICS, 98 (7). ? - ?. ISSN 0021-8979

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmail
Christmas, UMEUNSPECIFIED
Andreev, ADUNSPECIFIED
Faux, DAUNSPECIFIED
Date : 1 October 2005
Identification Number : 10.1063/1.2077843
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, III-V NITRIDES, GALLIUM NITRIDE, PIEZOELECTRIC COEFFICIENT, ELASTIC-CONSTANTS, THIN-FILMS, ALUMINUM NITRIDE, GAN, POLARIZATION, ALN, 1ST-PRINCIPLES
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:08
Last Modified : 12 Jun 2015 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/343

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