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Polarity-Dependent Forming in Ion Bombarded Amorphous Silicon Memory Devices

Gateru, R G, Orwa, J O and Shannon, J M (2005) Polarity-Dependent Forming in Ion Bombarded Amorphous Silicon Memory Devices Journal of Applied Physics, 97 (2). ISSN 00218979

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Abstract

Polarity-dependent forming in ion bombarded metal-semiconductor-metal (MSM) memory devices of hydrogenated amorphous silicon is reported. It is shown that prior to ion bombardment, current transport in the MSM devices is asymmetric and is controlled by the Schottky barriers at two MS junctions. Upon bombardment, however, there is a bulk component to the current and the I-V characteristics of the devices become symmetric at low bias voltages. The forming voltage in the bombarded devices shows polarity dependence. For positive bias applied on the top contact, we find that devices form at the same electric field independent of the thickness of the amorphous silicon while for negative voltage on the top contact, the electric field needed for forming increases with the thickness. A model involving the difference in energy deposition and heat sinking for the two polarities is proposed

Item Type: Article
Additional Information: Published in <i>Journal of Applied Physics,</i> Vol. 97, Iss. 2. Copyright 2005 American Institute of Physics. Click <a href=http://jap.aip.org/>here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 23 Sep 2013 18:27
URI: http://epubs.surrey.ac.uk/id/eprint/333

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