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On the role of dislocation loops in silicon light emitting diodes

Lourenco, MA, Milosavljevic, M, Gwilliam, RM, Homewood, KP and Shao, G (2005) On the role of dislocation loops in silicon light emitting diodes APPLIED PHYSICS LETTERS, 87 (20). ? - ?. ISSN 0003-6951


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The role of boron-induced dislocation loops on the suppression of the luminescence thermal quenching in silicon-based light-emitting diodes is investigated here. Luminescence measurements and cross-sectional transmission-electron-microscopy images from devices fabricated by boron implantation into crystalline silicon, and into a pre-amorphized substrate, to prevent the boron-induced loops formation, were compared. The results show that, in the devices incorporating dislocation loops between the depletion region and sample surface (the boron induced loops), the thermal quenching has been completely eliminated, in contrast with devices fabricated from the pre-amorphized substrate where strong thermal quenching is still observed.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, ROOM-TEMPERATURE, ELECTROLUMINESCENCE, DEVICES, PHOTOLUMINESCENCE
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:08
Last Modified: 23 Sep 2013 18:27

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