Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond
Lohstroh, A, Sellin, PJ, Wang, SG, Davies, AW, Parkin, J, Martin, RW and Edwards, PR (2007) Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond APPLIED PHYSICS LETTERS, 90 (10), ARTN 1.
The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal. (c) 2007 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||5 March 2007|
|Identification Number :||https://doi.org/10.1063/1.2711754|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, CVD DIAMOND, ELECTRICAL-PROPERTIES, DEPOSITED DIAMOND, DETECTORS, RADIATION, FILMS, TRANSPORT, SPECTRA, NUCLEAR, BEAM|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:08|
|Last Modified :||23 Sep 2013 18:27|
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