Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers
Masse, NF, Homeyer, E, Marko, IP, Adams, AR, Sweeney, SJ, Dehaese, O, Piron, R, Grillot, F and Loualiche, S (2007) Temperature and pressure dependence of the recombination processes in 1.5 mu m InAs/InP (311)B quantum dot lasers APPL PHYS LETT, 91 (13), 131113.
The threshold current and its radiative component in 1.5 mu m InAs/InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost temperature insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T-0 approximate to 55 K around 290 K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the nonradiative current and temperature sensitivity of these devices.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||24 September 2007|
|Identification Number :||10.1063/1.2790777|
|Uncontrolled Keywords :||HYDROSTATIC-PRESSURE, OPERATION|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:08|
|Last Modified :||23 Sep 2013 18:27|
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