Band Gap Reduction in GaNSb Alloys Due to the Anion Mismatch
Veal, T D, Piper, L F, Jollands, S, Bennett, B R, Jefferson, P H, Thomas, P A, McConville, C F, Murdin, B N, Buckle, L, Smith, G W and Ashley, T (2005) Band Gap Reduction in GaNSb Alloys Due to the Anion Mismatch Applied Physics Letters, 87 (13).
The structural and optoelectronic properties in GaNxSb1-x alloys (0 <= x < 0.02) grown by molecular-beam epitaxy on both GaSb substrates and AlSb buffer layers on GaAs substrates are investigated. High-resolution x-ray diffraction (XRD) and reciprocal space mapping indicate that the GaNxSb1-x epilayers are of high crystalline quality and the alloy composition is found to be independent of substrate, for identical growth conditions. The band gap of the GaNSb alloys is found to decrease with increasing nitrogen content from absorption spectroscopy. Strain-induced band-gap shifts, Moss-Burstein effects, and band renormalization were ruled out by XRD and Hall measurements. The band-gap reduction is solely due to the substitution of dilute amounts of highly electronegative nitrogen for antimony, and is greater than observed in GaNAs with the same N content. (C) 2005 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2005|
|Identification Number :||https://doi.org/10.1063/1.2058224|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol 87, Iss. 13. Copyright American Institute of Physics 2005 Click <a href=http://apl.aip.org/>here</a> to access the journal's website|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:08|
|Last Modified :||23 Sep 2013 18:27|
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