Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m
O'Brien, K, Sweeney, S J, Adams, A R, Murdin, B N, Salhi, A, Rouillard, Y and Joullie, A (2006) Recombination Processes in Midinfrared InGaAsSb Diode Lasers Emitting at 2.37 mu m Applied Physics Letters, 89 (5).
The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T-0 values.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2006|
|Identification Number :||10.1063/1.2243973|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 89, Iss. 5. Copyright 2006 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:08|
|Last Modified :||23 Sep 2013 18:27|
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