Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers
Sweeney, SJ, Lyons, LJ, Adams, AR and Lock, DA (2003) Direct measurement of facet temperature up to melting point and COD in high-power 980-nm semiconductor diode lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1325-1332.
The authors describe a straightforward experimental technique for measuring the facet temperature of a semiconductor laser under high-power operation by analyzing the laser emission itself. By applying this technique to 1-mm-long 980-nm lasers with 6- and 9-mum-wide tapers, they measure a large increase in facet temperature under both continuous wave (CW) and pulsed operation. Under CW operation, the facet temperature increases from similar to25 degreesC at low currents to over 140 degreesC at 500 mA. From pulsed measurements they observe a sharper rise in facet temperature as a function of current (similar to 400 degreesC at 500 mA) when compared with the CW measurements. This difference is caused by self-heating which limits the output power and hence facet temperature under CW operation. Under pulsed operation the maximum measured facet temperature was in excess of 1000 degreesC for a current of 1000 mA. Above this current, both lasers underwent. catastrophic optical damage (COD). These results show a striking increase in facet temperature under high-power operation consistent with the facet melting at COD. This is made possible by measuring the laser under pulsed operation.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 September 2003|
|Identification Number :||https://doi.org/10.1109/JSTQE.2003.820912|
|Uncontrolled Keywords :||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, laser thermal factors, optical fiber communication, power lasers, semiconductor device measurement, semiconductor lasers, temperature measurement, QUANTUM-WELL LASERS, CHEMICAL-VAPOR-DEPOSITION, IMPROVEMENT, RELIABILITY, PERFORMANCE, OPERATION, BARRIERS, MIRRORS, DAMAGE|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:07|
|Last Modified :||23 Sep 2013 18:27|
Actions (login required)
Downloads per month over past year