Toward Silicon-Based Lasers for Terahertz Sources
Lynch, S A, Paul, D J, Townsend, P, Matmon, G, Suet, Z, Kelsall, R W, Ikonic, Z, Harrison, P, Zhang, J, Norris, D J, Culllis, A G, Pidgeon, C R, Murzyn, P, Murdin, B, Bain, M, Gamble, H S, Zhao, M and Ni, W X (2006) Toward Silicon-Based Lasers for Terahertz Sources IEEE Journal of Selected Topics in Quantum Electronics, 12 (6).
Producing an electrically pumped silicon-based laser at terahertz frequencies is gaining increased attention these days. This paper reviews the recent advances in the search for a silicon-based terahertz laser. Topics covered include resonant tunneling in p-type Si/SiGe, terahertz intersubband electroluminescence from quantum cascade structures, intersubband lifetime measurements in Si/SiGe quantum wells, enhanced optical guiding using buried silicide layers, and the potential for exploiting common impurity dopants in silicon such as boron and phosphorus to realize a terahertz laser.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2006|
|Identification Number :||10.1109/JSTQE.2006.884069|
|Additional Information :||Published in <i>Journal of Selected Topics in Quantum Electronics,</i> Vol. 12, Iss. 6, Pt. 2. Copyright 2006 IEEE. Click <a href=http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=2944>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:05|
|Last Modified :||23 Sep 2013 18:25|
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