Suppression of D'yakonov-Perel Spin Relaxation in InAs and InSb by n-Type Doping at 300 K
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Murzyn, P, Pidgeon, C R, Phillips, P J, Merrick, M, Litvinenko, K L, Allam, J, Murdin, B N, Ashley, T, Jefferson, J H, Miller, A and Cohen, L F (2003) Suppression of D'yakonov-Perel Spin Relaxation in InAs and InSb by n-Type Doping at 300 K Applied Physics Letters, 83 (25). ISSN 00036951
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Abstract
We have made direct pump-probe measurements of spin lifetimes in intrinsic and degenerate n-InAs at 300 K. In particular, we measure remarkably long spin lifetimes (tau(s)similar to1.6 ns) for near-degenerate epilayers of n-InAs. For intrinsic material, we determine tau(s)similar to20 ps, in agreement with other workers. There are two main models that have been invoked for describing spin relaxation in narrow-gap semiconductors: the D'yakonov-Perel (DP) model and the Elliott-Yafet (EY) model. For intrinsic material, the DP model is believed to dominate in III-V materials above 77 K, in agreement with our results. We show that in the presence of strong n-type doping, the DP relaxation is suppressed both by the degeneracy condition and by electron-electron scattering, and that the EY model then dominates for the n-type material. We show that this same process is also responsible for a hitherto unexplained lengthening of tau(s) with n-type doping in our earlier measurements of n-InSb.
| Item Type: | Article |
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| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 83, Iss. 25. Copyright 2003 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 288 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:07 |
| Last Modified: | 25 Apr 2013 12:43 |
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