Manipulating Quantum-Confined Stark Shift in Electroluminescence from Quantum Dots with Side Gates
Xu, X L, Andreev, A and Willliams, D A (2008) Manipulating Quantum-Confined Stark Shift in Electroluminescence from Quantum Dots with Side Gates New Journal of Physics, 10 (5).
Single quantum dot (QD) light-emitting diodes were fabricated with side gates in a lateral p-i-n structure. The electroluminescence (EL) energy from the QDs can be controlled independently by the side gates and by forward bias. Stark shifts in EL have been observed up to 0.4 meV as a function of forward injection current, and around 0.7 meV by applying an electric field of 36 kV cm(-1) across the QDs. The independent control of the QD emission energy is an important step towards electrically tuning the coupling between QDs and cavities, and generating entangled-photon sources.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||1 January 2008|
|Identification Number :||10.1088/1367-2630/10/5/053036|
|Additional Information :||Published in <i>New Journal of Physics,</i> Vol. 10. Copyright 2008 IOP Publishing Ltd. Click <a href=http://www.iop.org/EJ/njp>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:07|
|Last Modified :||23 Sep 2013 18:27|
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