Strain Distribution in GaN/AlN Quantum-Dot Superlattices
Sarigiannidou, E, Monroy, E, Daudin, B, Rouviere, J L and Andreev, A D (2005) Strain Distribution in GaN/AlN Quantum-Dot Superlattices Applied Physics Letters, 87 (20).
The two-dimensional strain distribution in a GaN/AlN quantum-dot (QD) superlattice is measured from high-resolution transmission electron microscopy images using the geometrical phase analysis. The results are compared to elastic theoretical calculations using a combination of Fourier transform and Green's function techniques. The GaN/AlN system appears to be a model system for a comparison between theory and experiments as interdiffusion between GaN and AlN is negligible. We verify that for the case of a three-dimensional system, such as a QD, the biaxial strain approximation is not valid. Furthermore, we demonstrate that the presence of QDs induces a modulation in the strain state of the AlN barriers which is the driving force for the vertical alignment of the GaN QDs in the AlN matrix.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||1 January 2005|
|Identification Number :||https://doi.org/10.1063/1.2123394|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 87, Iss. 20. Copyright 2005 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:07|
|Last Modified :||23 Sep 2013 18:27|
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