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Strain Distribution in GaN/AlN Quantum-Dot Superlattices

Sarigiannidou, E, Monroy, E, Daudin, B, Rouviere, J L and Andreev, A D (2005) Strain Distribution in GaN/AlN Quantum-Dot Superlattices Applied Physics Letters, 87 (20). ISSN 00036951


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The two-dimensional strain distribution in a GaN/AlN quantum-dot (QD) superlattice is measured from high-resolution transmission electron microscopy images using the geometrical phase analysis. The results are compared to elastic theoretical calculations using a combination of Fourier transform and Green's function techniques. The GaN/AlN system appears to be a model system for a comparison between theory and experiments as interdiffusion between GaN and AlN is negligible. We verify that for the case of a three-dimensional system, such as a QD, the biaxial strain approximation is not valid. Furthermore, we demonstrate that the presence of QDs induces a modulation in the strain state of the AlN barriers which is the driving force for the vertical alignment of the GaN QDs in the AlN matrix.

Item Type: Article
Additional Information: Published in <i>Applied Physics Letters,</i> Vol. 87, Iss. 20. Copyright 2005 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:07
Last Modified: 23 Sep 2013 18:27

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