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Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A , Hopkinson, M, Al-Khafaji, M, David, J P R, Cullis, A G, Hill, G and Clark, J C (2000) Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots Physical Review Letters (PRL), 84 (4). pp. 733-736.

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New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole is localized towards the top of the dot, above the electron, an alignment that is inverted relative to the predictions of all recent calculations. We are able to obtain new information on the structure and composition of buried quantum dots from modeling of the data. We also demonstrate that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
Fry, P W
Itskevich, I E
Mowbray, D J
Skolnick, M S
Finley, J J
Barker, J A
O'Reilly, E P
Wilson, L R
Larkin, I A
Maksym, P A
Hopkinson, M
Al-Khafaji, M
David, J P R
Cullis, A G
Hill, G
Clark, J C
Date : January 2000
DOI : 10.1103/PhysRevLett.84.733
Related URLs :
Additional Information : © 2000 The American Physical Society
Depositing User : Melanie Hughes
Date Deposited : 07 Jan 2011 11:58
Last Modified : 31 Oct 2017 14:06

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