Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
Fry, P W, Itskevich, I E, Mowbray, D J, Skolnick, M S, Finley, J J, Barker, J A, O'Reilly, E P, Wilson, L R, Larkin, I A, Maksym, P A, Hopkinson, M, Al-Khafaji, M, David, J P R, Cullis, A G, Hill, G and Clark, J C (2000) Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots Physical Review Letters (PRL), 84 (4). pp. 733-736.
inverted_electron-hole_BARKER_00.pdf - Published Version
New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole is localized towards the top of the dot, above the electron, an alignment that is inverted relative to the predictions of all recent calculations. We are able to obtain new information on the structure and composition of buried quantum dots from modeling of the data. We also demonstrate that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||January 2000|
|Identification Number :||10.1103/PhysRevLett.84.733|
|Related URLs :|
|Additional Information :||© 2000 The American Physical Society|
|Depositing User :||Melanie Hughes|
|Date Deposited :||07 Jan 2011 11:58|
|Last Modified :||26 Nov 2014 14:08|
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