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Constraints on micro-Raman strain metrology for highly doped strained Si materials

O'Reilly, L, Horan, K, McNally, PJ, Bennett, NS, Cowern, NEB, Lankinen, A, Sealy, BJ, Gwilliam, RM, Noakes, TCQ and Bailey, P (2008) Constraints on micro-Raman strain metrology for highly doped strained Si materials APPLIED PHYSICS LETTERS, 92 (23). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
O'Reilly, LUNSPECIFIED
Horan, KUNSPECIFIED
McNally, PJUNSPECIFIED
Bennett, NSUNSPECIFIED
Cowern, NEBUNSPECIFIED
Lankinen, AUNSPECIFIED
Sealy, BJUNSPECIFIED
Gwilliam, RMUNSPECIFIED
Noakes, TCQUNSPECIFIED
Bailey, PUNSPECIFIED
Date : 9 June 2008
Identification Number : 10.1063/1.2942392
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, STRESS MEASUREMENTS, SILICON, SPECTROSCOPY, JUNCTIONS, FILMS
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:07
Last Modified : 14 Feb 2015 14:33
URI: http://epubs.surrey.ac.uk/id/eprint/260

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