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Extraordinary optical gain from silicon implanted with erbium

Lourenco, MA, Gwilliam, RM and Homewood, KP (2007) Extraordinary optical gain from silicon implanted with erbium APPLIED PHYSICS LETTERS, 91 (14). ? - ?. ISSN 0003-6951


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Here we report on measurements of optical gain at 1.5 mu m in crystalline silicon. Gain is achieved by the incorporation of the rare earth erbium in silicon. A method was developed to enable the gain measurement in short silicon waveguides. Crucially, gain values obtained are significantly greater than previously supposed. We have measured a lower limit for the optical cross section for Er3+ of 5x10(-19) cm(2), 30 times higher than previously anticipated. Given these higher values, this system now offers a realistic route to the production of electrically pumped silicon optical amplifier and laser devices using standard silicon process technology.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, RAMAN LASER
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:07
Last Modified: 23 Sep 2013 18:27

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