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Electrical transport within polymeric amorphous carbon thin films and the effects of ion implantation

Khan, RUA and Silva, SRP (2003) Electrical transport within polymeric amorphous carbon thin films and the effects of ion implantation JOURNAL OF APPLIED PHYSICS, 94 (7). 4470 - 4476. ISSN 0021-8979

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Here, we will discuss the electrical transport processes that occur within thin films of polymeric amorphous carbon, which possess a high resistivity of 1015 V cm, a Tauc band gap of 2.6 eV, and a low defect density of 1017 spins cm23. Using current versus voltage measurements, we have shown that the current is space-charge-limited, with a mobility value of typically 10210 cm2 V21 s21. The implantation of boron ions at doses below 631014 cm22 results in an increase in mobility of more than one order of magnitude. Above this dose, the conductivity increases by five orders of magnitude, and the transport mechanism changes to a Frenkel–Poole type conduction process. At an intermediate dose of 231015 ions cm22, the current versus voltage characteristic exhibits strong hysteresis. The observed hysteresis effects could be removed from one polarity by implanting only through the first half of the film. The hysteresis is likely to be due to the trapping of holes at one or both of the interfaces, resulting in the modification of the space-charge within the polymeric amorphous carbon film.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, DIAMOND-LIKE CARBON, DENSITY-OF-STATES, FIELD-EMISSION, SCHOTTKY, CONDUCTION, SOLIDS
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Melanie Hughes
Date Deposited: 21 Oct 2010 10:06
Last Modified: 23 Sep 2013 18:39

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