Electron field emission from excimer laser crystallized amorphous silicon
Tang, YF, Silva, SRP, Boskovic, BO, Shannon, JM and Rose, MJ (2002) Electron field emission from excimer laser crystallized amorphous silicon APPLIED PHYSICS LETTERS, 80 (22). 4154 - 4156. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v80/i22/p4154...
We show field emission from excimer laser crystallized ~ELC! hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 1025 A ~current densities'0.04 A/cm2! at threshold fields less than 15 V/mm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged.
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, CARBON THIN-FILMS, POLYCRYSTALLINE SILICON, CATHODES, EMITTERS|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Melanie Hughes|
|Deposited On:||19 Oct 2010 10:23|
|Last Modified:||16 Feb 2013 16:22|
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