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Electron field emission from excimer laser crystallized amorphous silicon

Tang, YF, Silva, SRP, Boskovic, BO, Shannon, JM and Rose, MJ (2002) Electron field emission from excimer laser crystallized amorphous silicon APPLIED PHYSICS LETTERS, 80 (22). 4154 - 4156. ISSN 0003-6951

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We show field emission from excimer laser crystallized ~ELC! hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 1025 A ~current densities'0.04 A/cm2! at threshold fields less than 15 V/mm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, CARBON THIN-FILMS, POLYCRYSTALLINE SILICON, CATHODES, EMITTERS
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Melanie Hughes
Date Deposited: 19 Oct 2010 09:23
Last Modified: 23 Sep 2013 18:39

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