Electron field emission from excimer laser crystallized amorphous silicon

Abstract

We show field emission from excimer laser crystallized ~ELC! hydrogenated amorphous silicon (a-Si:H) at current densities and threshold fields suitable for display applications. The laser crystallized a-Si:H gives rise to a densely packed and relative sharp surface morphology that gives emission currents of the order of 1025 A ~current densities'0.04 A/cm2! at threshold fields less than 15 V/mm in a diode configuration, without the need for a forming process. With the progress in utilizing ELC in flat panel driver electronics, a fully integrated field emission display on a single glass substrate can now be envisaged.

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