Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon
Tang, YF, Silva, SRP and Rose, MJ (2001) Super sequential lateral growth of Nd : YAG laser crystallized hydrogenated amorphous silicon APPLIED PHYSICS LETTERS, 78 (2). 186 - 188. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v78/i2/p186_s...
Lateral growth crystallization of hydrogenated amorphous silicon with single and multiple pulse excitation using a Nd:YAG laser at a wavelength of 532 nm and a 3 ns pulse width at a repetition of 10 Hz is shown. With single pulse crystallization, large grain sizes of the order of 1 mm were obtained with an energy density .400 mJ/cm2, and these have been studied using transmission electron microscopy ~TEM! and atomic force microscopy. We show that, by using extremely short ~3 ns! multiple pulse excitation of significantly lower powers ~,150 mJ/cm2!, than that used to crystallize amorphous silicon with single pulse excitation, a uniform growth of crystalline grains is observed. TEM gives evidence for lateral grain growth with multiple pulse crystallization at low energies. We suggest that a ‘‘super sequential lateral growth’’ mechanism is occurring.
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, THIN-FILM TRANSISTORS, INTERFERENCE CRYSTALLIZATION, POLYCRYSTALLINE SILICON, GRAIN-GROWTH, SI FILMS, A-SI, GLASS|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Melanie Hughes|
|Deposited On:||19 Oct 2010 09:54|
|Last Modified:||16 Feb 2013 15:29|
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