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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Slotte, J, Rummukainen, M, Tuomisto, F, Markevich, VP, Peaker, AR, Jeynes, C and Gwilliam, RM (2008) Evolution of vacancy-related defects upon annealing of ion-implanted germanium PHYSICAL REVIEW B, 78 (8). ? - ?. ISSN 1098-0121

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Slotte, JUNSPECIFIED
Rummukainen, MUNSPECIFIED
Tuomisto, FUNSPECIFIED
Markevich, VPUNSPECIFIED
Peaker, ARUNSPECIFIED
Jeynes, CUNSPECIFIED
Gwilliam, RMUNSPECIFIED
Date : 1 August 2008
Identification Number : 10.1103/PhysRevB.78.085202
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, PHYSICS, CONDENSED MATTER, SILICON, SI
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:07
Last Modified : 18 Sep 2014 01:52
URI: http://epubs.surrey.ac.uk/id/eprint/240

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