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Evolution of vacancy-related defects upon annealing of ion-implanted germanium

Slotte, J, Rummukainen, M, Tuomisto, F, Markevich, VP, Peaker, AR, Jeynes, C and Gwilliam, RM (2008) Evolution of vacancy-related defects upon annealing of ion-implanted germanium PHYSICAL REVIEW B, 78 (8). ? - ?. ISSN 1098-0121


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Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1 x 10(12) cm(-2) and 4 x 10(14) cm(-2). Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1 x 10(13) cm(-2) and a fluence of 1 x 10(14) cm(-2) was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200-400 degrees C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, SILICON, SI
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:07
Last Modified: 23 Sep 2013 18:26

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