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Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy

Clay, KJ, Speakman, SP, Amaratunga, GAJ and Silva, SRP (1996) Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy JOURNAL OF APPLIED PHYSICS, 79 (9). 7227 - 7233. ISSN 0021-8979

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmail
Clay, KJUNSPECIFIED
Speakman, SPUNSPECIFIED
Amaratunga, GAJUNSPECIFIED
Silva, SRPUNSPECIFIED
Date : 1 May 1996
Identification Number : 10.1063/1.361439
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, AMORPHOUS-CARBON FILMS, LASER-INDUCED PLASMA, DIAMOND, NITRIDE, DISCHARGE, DILUTION, GAS, CH4
Related URLs :
Depositing User : Melanie Hughes
Date Deposited : 29 Sep 2010 13:10
Last Modified : 17 Jan 2015 14:40
URI: http://epubs.surrey.ac.uk/id/eprint/2376

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