Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy
Clay, KJ, Speakman, SP, Amaratunga, GAJ and Silva, SRP (1996) Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy JOURNAL OF APPLIED PHYSICS, 79 (9). 7227 - 7233. ISSN 0021-8979
|PDF - Published Version|
Official URL: http://jap.aip.org/resource/1/japiau/v79/i9/p7227_...
Optical emission spectra ~OES! from CH4/N2 rf plasmas, which are used for the deposition of nitrogen-containing hydrogenated amorphous carbon ~a-C:H:N! thin films, have been characterized. Previously unidentified spectral lines have been assigned to atomic N. Further identified species include CH, H, H2, N2, N2 1, N, and CN. Variations between spectra from the pure CH4 or N2 plasmas and the mixed CH4/N2 plasma are discussed. The enhancement of excited nitrogen species, with the addition CH4 , is attributed to Penning ionization. The observed OES variations of the CH4/N2 plasma with power, pressure, and CH4/N2 ratio are explained in terms of possible reaction mechanisms and their activation, and correlated with preliminary film growth characteristics.
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, AMORPHOUS-CARBON FILMS, LASER-INDUCED PLASMA, DIAMOND, NITRIDE, DISCHARGE, DILUTION, GAS, CH4|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Melanie Hughes|
|Deposited On:||29 Sep 2010 14:10|
|Last Modified:||08 Jun 2013 14:40|
Repository Staff Only: item control page