Tetrahedral amorphous carbon films prepared by magnetron sputtering and dc ion plating
Schwan, J, Ulrich, S, Roth, H, Ehrhardt, H, Silva, SRP, Robertson, J, Samlenski, R and Brenn, R (1996) Tetrahedral amorphous carbon films prepared by magnetron sputtering and dc ion plating JOURNAL OF APPLIED PHYSICS, 79 (3). 1416 - 1422. ISSN 0021-8979
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Official URL: http://jap.aip.org/resource/1/japiau/v79/i3/p1416_...
Highly tetrahedral, dense amorphous carbon ~ta-C! films have been deposited using rf sputtering of graphite by an unbalanced magnetron with intense dc Ar-ion plating at low temperatures ~,70 °C!. The ratio of the argon ion flux to neutral carbon flux Fi/Fn is about 5. The film density and compressive stress are found to pass through a maximum of 2.7 g/cm3 and 16 GPa, respectively, at an ion plating energy of about 100 eV. Experiments with higher ion flux ratios of Fi/Fn510 show that it is possible to deposit carbon films with densities up to 3.1 g/cm3 and sp3 contents up to 87%. Deposition of ta-C in this experiment when the energetic species is Ar appears to require a minimum stress of 14 GPa to create significant sp3 bonding, which contrasts with the continuous increase in sp3 content with stress when the energetic species is C ions themselves. These results are used to discuss possible deposition mechanisms.
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, DIAMOND-LIKE CARBON, RAMAN-SCATTERING, DEPOSITION, ENERGY, PRESSURE, GROWTH|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Melanie Hughes|
|Deposited On:||29 Sep 2010 10:18|
|Last Modified:||28 Apr 2013 14:45|
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