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Differential Hall Effect Profiling of Ultrashallow Junctions in Sb Implanted Silicon

Alzanki, T, Gwilliam, R, Emerson, N and Sealy, B J (2004) Differential Hall Effect Profiling of Ultrashallow Junctions in Sb Implanted Silicon Applied Physics Letters, 85 (11).


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A differential Hall effect technique has been developed to obtain doping profiles at a depth resolution down to 2 nm with junction depths of about 20 nm. We have determined the electrical characteristics of 5x10(14) Sb+ cm(-2) implanted in (100) silicon at an energy of 5 keV. A comparison was made between carrier concentration profiles and secondary ion mass spectroscopy measurements of the atomic profiles as a function of annealing temperature. We have profiled single energy implants of antimony and also double implants; the latter enables complete profiles to be measured down to the background level of about 10(18) cm(-3). (C) 2004 American Institute of Physics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
Alzanki, T
Emerson, N
Sealy, B
Date : 1 January 2004
DOI : 10.1063/1.1792378
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 85, Iss. 11. Copyright 2004 American Institute of Physics. Click <a href=>here</a> to access the journal's webpage.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:05
Last Modified : 16 Jan 2019 16:18

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