Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric

Tan, YY, Tan, LW, Jayawardena, KDGI, Anguita, JV, Carey, JD and Silva, SRP (2011) Field effect in chemical vapour deposited graphene incorporating a polymeric gate dielectric Synthetic Metals, 161 (21-22). pp. 2249-2252.

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Abstract

We have investigated the room temperature long channel field effect characteristics of a single graphene layer transistor incorporating a poly-4-vinyl-phenol (PVP) organic insulating layer, as an alternative to conventional oxide gate dielectric materials. High purity copper foils were used in the chemical vapour growth of the graphene layer and visible Raman analysis confirmed the presence of a high quality mono-layer carbon film. Using a channel length of 50 μm, a field effect hole mobility of 37 cm2/Vs was calculated, which demonstrates the possibility of an all carbon graphene based large area transistor with carrier mobilities above those found in conventional long channel all organic electronic transistors.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Name Email ORCID Tan, YY Tan, LW Jayawardena, KDGI Anguita, JV Carey, JD Silva, SRP
Date :	December 2011
Identification Number :	10.1016/j.synthmet.2011.08.029
Uncontrolled Keywords :	long channel field effect characteristics, single graphene layer transistor, poly-4-vinyl-phenol (PVP), organic insulating layer, oxide gate dielectric materials, High purity copper foils, chemical vapour growth, visible Raman analysis, field effect hole mobility, all carbon graphene based large area transistor, organic electronics
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 14:59
Last Modified :	31 Oct 2017 14:55
URI:	http://epubs.surrey.ac.uk/id/eprint/22850

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