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Photo-thermal chemical vapor deposition growth of graphene

Tan, YY, Jayawardena, KDGI, Adikaari, AADT, Tan, LW, Anguita, JV, Henley, SJ, Stolojan, V, Carey, JD and Silva, SRP (2012) Photo-thermal chemical vapor deposition growth of graphene Carbon, 50 (2). 668 - 673. ISSN 0008-6223

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Abstract

The growth of graphene on Ni using a photo-thermal chemical vapor deposition (PT-CVD) technique is reported. The non-thermal equilibrium nature of PT-CVD process resulted in a much shorter duration in both heating up and cooling down stages, thus allowing for a reduction in the overall growth time. Despite the reduced time for synthesis compared to standard thermal chemical vapor deposition (T-CVD), there was no decrease in the quality of the graphene film produced. Furthermore, the graphene formation under PT-CVD is much less sensitive to cooling rate than that observed for T-CVD process. Growth on Ni also allows for the alleviation of hydrogen blister damage that is commonly encountered during growth on Cu substrates and a lower processing temperature. To characterize the film’s electrical and optical properties, we further report the use of pristine PT-CVD grown graphene as the transparent electrode material in an organic photovoltaic device (OPV) with poly(3-hexyl)thiophene (P3HT)/phenyl-C61-butyric acid methyl ester (PCBM) as the active layer where the power conversion efficiency of the OPV cell is found to be comparable to that reported using pristine graphene prepared by conventional CVD.

Item Type: Article
Additional Information: NOTICE: this is the author’s version of a work that was accepted for publication in Carbon. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Carbon, 50(2), February 2012, DOI 10.1016/j.carbon.2011.09.025 .
Uncontrolled Keywords: Graphene growth, Photo-thermal chemical vapour deposition, Large area graphene growth, Low tempertaure graphene growth, poly(3-hexyl)thiophene (P3HT) graphene, phenyl-C61-butyric acid methyl ester (PCBM) graphene, Graphene - organic hybrid, energy coupling, thermal barrier layers, reduced growth time, hydrocarbon feedstock, CVD, chemical vapour deposition, graphene, graphene OPV
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Symplectic Elements
Date Deposited: 08 Dec 2011 10:42
Last Modified: 09 Jun 2014 13:40
URI: http://epubs.surrey.ac.uk/id/eprint/22849

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