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Electrical behaviour of arsenic implanted silicon wafers at large tilt angle

Claudio, G, Jeynes, C, Kirkby, KJ, Sealy, BJ, Gwilliam, R, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Electrical behaviour of arsenic implanted silicon wafers at large tilt angle IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS. 614 - 617.

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Manufacturing, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, component, tilt angle, arsenic, RBS, Hall effect
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Melanie Hughes
Date Deposited: 17 Sep 2010 09:24
Last Modified: 09 Jun 2014 13:26
URI: http://epubs.surrey.ac.uk/id/eprint/2274

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