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Electrical behaviour of arsenic implanted silicon wafers at large tilt angle

Claudio, G, Jeynes, C, Kirkby, KJ, Sealy, BJ, Gwilliam, R, Low, R, Brown, B, Alford, TL, Nastasi, M and Vella, MC (2003) Electrical behaviour of arsenic implanted silicon wafers at large tilt angle IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS. pp. 614-617.

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmailORCID
Claudio, GUNSPECIFIEDUNSPECIFIED
Jeynes, CUNSPECIFIEDUNSPECIFIED
Kirkby, KJUNSPECIFIEDUNSPECIFIED
Sealy, BJUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Low, RUNSPECIFIEDUNSPECIFIED
Brown, BUNSPECIFIEDUNSPECIFIED
Alford, TLUNSPECIFIEDUNSPECIFIED
Nastasi, MUNSPECIFIEDUNSPECIFIED
Vella, MCUNSPECIFIEDUNSPECIFIED
Date : 1 January 2003
Contributors :
ContributionNameEmailORCID
PublisherIEEE, UNSPECIFIEDUNSPECIFIED
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Manufacturing, Engineering, Electrical & Electronic, Physics, Applied, Physics, Condensed Matter, Engineering, Physics, component, tilt angle, arsenic, RBS, Hall effect
Related URLs :
Depositing User : Melanie Hughes
Date Deposited : 17 Sep 2010 09:24
Last Modified : 17 Jan 2015 14:59
URI: http://epubs.surrey.ac.uk/id/eprint/2274

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