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Vacancy-engineering implants for high boron activation in silicon on insulator

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Smith, AJUNSPECIFIED
Cowern, NEBUNSPECIFIED
Gwilliam, RUNSPECIFIED
Sealy, BJUNSPECIFIED
Colombeau, BUNSPECIFIED
Collart, EJHUNSPECIFIED
Gennaro, SUNSPECIFIED
Giubertoni, DUNSPECIFIED
Bersani, MUNSPECIFIED
Barozzi, MUNSPECIFIED
Date : 20 February 2006
Identification Number : 10.1063/1.2178487
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SI, DIFFUSION, JUNCTIONS
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:07
Last Modified : 14 Feb 2015 14:33
URI: http://epubs.surrey.ac.uk/id/eprint/227

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