Vacancy-engineering implants for high boron activation in silicon on insulator

Abstract

The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional preamorphization and solid-phase epitaxial regrowth. An optimized 160 keV silicon implant in a 55/145 nm silicon-on-insulator structure enables stable activation of a 500 eV boron implant to a concentration similar to 5x10(20) cm(-3).

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