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Vacancy-engineering implants for high boron activation in silicon on insulator

Smith, AJ, Cowern, NEB, Gwilliam, R, Sealy, BJ, Colombeau, B, Collart, EJH, Gennaro, S, Giubertoni, D, Bersani, M and Barozzi, M (2006) Vacancy-engineering implants for high boron activation in silicon on insulator APPLIED PHYSICS LETTERS, 88 (8). ? - ?. ISSN 0003-6951


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The formation of boron interstitial clusters is a key limiting factor for the fabrication of highly conductive ultrashallow doped regions in future silicon-based device technology. Optimized vacancy engineering strongly reduces boron clustering, enabling low-temperature electrical activation to levels rivalling what can be achieved with conventional preamorphization and solid-phase epitaxial regrowth. An optimized 160 keV silicon implant in a 55/145 nm silicon-on-insulator structure enables stable activation of a 500 eV boron implant to a concentration similar to 5x10(20) cm(-3).

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, SI, DIFFUSION, JUNCTIONS
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:07
Last Modified: 23 Sep 2013 18:26

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