Concentration Dependent Interdiffusion in InGaAs/GaAs as Evidenced by High Resolution X-ray Diffraction and Photoluminescence Spectroscopy
Bollet, F, Gillin, W P, Hopkinson, M and Gwilliam, R (2005) Concentration Dependent Interdiffusion in InGaAs/GaAs as Evidenced by High Resolution X-ray Diffraction and Photoluminescence Spectroscopy Journal of Applied Physics, 97 (1).
A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions demonstrates that the Fickian model with a constant coefficient of diffusion is inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions. A simple model, with the well retaining its square shape and homogeneity while dissolving the barriers when annealed, is successful in modelling both the HRXRD and photoluminescence data.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre|
|Date :||1 January 2005|
|Identification Number :||https://doi.org/10.1063/1.1825613|
|Additional Information :||Published in <i>Journal of Applied Physics,</i> Vol. 97, Iss. 1. Copyright 2005 American Institute of Physics. Click <a href=http://jap.aip.org/ >here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:07|
|Last Modified :||23 Sep 2013 18:26|
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