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Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures

Avice, M, Diplas, S, Thogersen, A, Christensen, JS, Grossner, U, Svensson, BG, Nilsen, O, Fjellvag, H and Watts, JF (2007) Rearrangement of the oxide-semiconductor interface in annealed Al2O3/4H-SiC structures APPLIED PHYSICS LETTERS, 91 (5). ? - ?. ISSN 0003-6951

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Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, FILMS, THIN
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Divisions: Faculty of Engineering and Physical Sciences > Mechanical Engineering Sciences
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:05
Last Modified: 01 Oct 2014 01:33
URI: http://epubs.surrey.ac.uk/id/eprint/21

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