Spin Lifetime in High Quality InSb Epitaxial Layers Grown on GaAs
Tools
Tools
Tools
Litvinenko, K L, Nikzad, L, Allam, J, Murdin, B N, Pidgeon, C R, Harris, J J, Zhang, T and Cohen, L F (2007) Spin Lifetime in High Quality InSb Epitaxial Layers Grown on GaAs Journal of Applied Physics, 101 (8). ISSN 00218979
![[img]](/style/images/fileicons/application_pdf.png)
| PDF 279Kb |
Abstract
The spin relaxation in undoped InSb films grown on GaAs has been investigated in the temperature range from 77 to 290 K. Two distinct lifetime values have been extracted, 1 and 2.5 ps, dependent on film thickness. Comparison of this data with a multilayer transport analysis of the films suggests that the longer time (similar to 2.5 ps at 290 K) is associated with the central intrinsic region of the film, while the shorter time (similar to 1 ps) is related to the highly dislocated accumulation region at the film-substrate interface. Whereas previous work on InAs films grown on GaAs showed that the native surface defect resulted in an additional charge accumulation layer with high conductivity but very short spin lifetime, in InSb layers the surface states introduce a depletion region. We infer that InSb could be a more attractive candidate for spintronic applications than InAs.
| Item Type: | Article |
|---|---|
| Additional Information: | Published in <i>Journal of Applied Physics,</i> Vol. 101, Iss. 8. Copyright 2007 American Institute of Physics. Click <a href=http://jap.aip.org/>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 208 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:07 |
| Last Modified: | 25 Apr 2013 12:43 |
Document Downloads
Repository Staff Only: item control page