High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy
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Zhang, T, Clowes, S K, Debnath, M, Bennett, A, Roberts, C, Harris, J J, Stradling, R A, Cohen, L F, Lyford, T and Fewster, P F (2004) High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy Applied Physics Letters, 84 (22). ISSN 00036951
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Abstract
The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60-300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 mum.
| Item Type: | Article |
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| Additional Information: | Published in <i>Applied Physics Letters,</i> Vol. 84. Copyright 2004 American Institute of Physics. Click <a href=http://apl.aip.org/apl/>here</a> to access the journal's website. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 192 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:06 |
| Last Modified: | 26 Oct 2012 17:23 |
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