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High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy

Zhang, T, Clowes, S K, Debnath, M, Bennett, A, Roberts, C, Harris, J J, Stradling, R A, Cohen, L F, Lyford, T and Fewster, P F (2004) High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy Applied Physics Letters, 84 (22).

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Abstract

The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60-300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 mum.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Zhang, TUNSPECIFIEDUNSPECIFIED
Clowes, S Ks.clowes@surrey.ac.ukUNSPECIFIED
Debnath, MUNSPECIFIEDUNSPECIFIED
Bennett, AUNSPECIFIEDUNSPECIFIED
Roberts, CUNSPECIFIEDUNSPECIFIED
Harris, J JUNSPECIFIEDUNSPECIFIED
Stradling, R AUNSPECIFIEDUNSPECIFIED
Cohen, L FUNSPECIFIEDUNSPECIFIED
Lyford, TUNSPECIFIEDUNSPECIFIED
Fewster, P FUNSPECIFIEDUNSPECIFIED
Date : 1 January 2004
Identification Number : 10.1063/1.1748850
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 84. Copyright 2004 American Institute of Physics. Click <a href=http://apl.aip.org/apl/>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 23 Sep 2013 18:26
URI: http://epubs.surrey.ac.uk/id/eprint/192

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