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High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy

Zhang, T, Clowes, S K, Debnath, M, Bennett, A, Roberts, C, Harris, J J, Stradling, R A, Cohen, L F, Lyford, T and Fewster, P F (2004) High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy Applied Physics Letters, 84 (22).


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The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60-300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 mum.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
Zhang, T
Clowes, S
Debnath, M
Bennett, A
Roberts, C
Harris, J J
Stradling, R A
Cohen, L F
Lyford, T
Fewster, P F
Date : 1 January 2004
DOI : 10.1063/1.1748850
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 84. Copyright 2004 American Institute of Physics. Click <a href=>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 16 Jan 2019 16:18

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