High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy
Zhang, T, Clowes, S K, Debnath, M, Bennett, A, Roberts, C, Harris, J J, Stradling, R A, Cohen, L F, Lyford, T and Fewster, P F (2004) High-Mobility Thin InSb Films Grown by Molecular Beam Epitaxy Applied Physics Letters, 84 (22).
The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers (60-300 nm) epitaxially grown on GaAs(100) substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 mum.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2004|
|Identification Number :||https://doi.org/10.1063/1.1748850|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 84. Copyright 2004 American Institute of Physics. Click <a href=http://apl.aip.org/apl/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:06|
|Last Modified :||23 Sep 2013 18:26|
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