High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers
Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1196-1201.
The pressure dependence of the components of the recombination current at threshold in 1.3-mum GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current With increasing pressure is associated with the unusual increase of the Auger-related nonradiative recombination current, while the defect-related monomolecular nonradiative recombination current is almost constant. Theoretical calculations show that the increase of the Auger current can be attributed to a large increase in the threshold carrier density with pressure, Which is mainly due to the increase in the electron effective mass arising from the enhanced level-anticrossing between the GaInNAs conduction band and the nitrogen level.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 September 2003|
|Identification Number :||https://doi.org/10.1109/JSTQE.2003.819515|
|Uncontrolled Keywords :||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, optical measurement, quantum-well lasers, semiconductor device measurement, semiconductor lasers, spontaneous emission, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, ALLOYS, BAND, GAAS, GAAS1-XNX, LAYER, EDGE|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:06|
|Last Modified :||23 Sep 2013 18:26|
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