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High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers

Jin, SR, Sweeney, SJ, Tomic, S, Adams, AR and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). 1196 - 1201. ISSN 1077-260X


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The pressure dependence of the components of the recombination current at threshold in 1.3-mum GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current With increasing pressure is associated with the unusual increase of the Auger-related nonradiative recombination current, while the defect-related monomolecular nonradiative recombination current is almost constant. Theoretical calculations show that the increase of the Auger current can be attributed to a large increase in the threshold carrier density with pressure, Which is mainly due to the increase in the electron effective mass arising from the enhanced level-anticrossing between the GaInNAs conduction band and the nitrogen level.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, optical measurement, quantum-well lasers, semiconductor device measurement, semiconductor lasers, spontaneous emission, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, ALLOYS, BAND, GAAS, GAAS1-XNX, LAYER, EDGE
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Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:06
Last Modified: 23 Sep 2013 18:26

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