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High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers

Jin, SR, Sweeney, Stephen, Tomic, S, Adams, Alfred and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1196-1201.

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Abstract

The pressure dependence of the components of the recombination current at threshold in 1.3-mum GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current With increasing pressure is associated with the unusual increase of the Auger-related nonradiative recombination current, while the defect-related monomolecular nonradiative recombination current is almost constant. Theoretical calculations show that the increase of the Auger current can be attributed to a large increase in the threshold carrier density with pressure, Which is mainly due to the increase in the electron effective mass arising from the enhanced level-anticrossing between the GaInNAs conduction band and the nitrogen level.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
NameEmailORCID
Jin, SRUNSPECIFIEDUNSPECIFIED
Sweeney, StephenS.Sweeney@surrey.ac.ukUNSPECIFIED
Tomic, SUNSPECIFIEDUNSPECIFIED
Adams, AlfredAlf.Adams@surrey.ac.ukUNSPECIFIED
Riechert, HUNSPECIFIEDUNSPECIFIED
Date : 1 September 2003
Identification Number : 10.1109/JSTQE.2003.819515
Copyright Disclaimer : © 2003 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, optical measurement, quantum-well lasers, semiconductor device measurement, semiconductor lasers, spontaneous emission, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, ALLOYS, BAND, GAAS, GAAS1-XNX, LAYER, EDGE
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 12 Jul 2017 16:14
URI: http://epubs.surrey.ac.uk/id/eprint/190

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