University of Surrey

Test tubes in the lab Research in the ATI Dance Research

High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers

Jin, SR, Sweeney, Stephen, Tomic, S, Adams, Alfred and Riechert, H (2003) High-pressure studies of recombination mechanisms in 1.3-mu m GaInNAs quantum-well lasers IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 9 (5). pp. 1196-1201.

[img] Text
Restricted to Repository staff only

Download (234kB)


The pressure dependence of the components of the recombination current at threshold in 1.3-mum GaInNAs single quantum-well lasers is presented using for the first time high-pressure spontaneous emission measurements up to 13 kbar. It is shown that, above 6 kbar, the rapid increase of the threshold current With increasing pressure is associated with the unusual increase of the Auger-related nonradiative recombination current, while the defect-related monomolecular nonradiative recombination current is almost constant. Theoretical calculations show that the increase of the Auger current can be attributed to a large increase in the threshold carrier density with pressure, Which is mainly due to the increase in the electron effective mass arising from the enhanced level-anticrossing between the GaInNAs conduction band and the nitrogen level.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering
Authors :
Jin, SR
Tomic, S
Riechert, H
Date : 1 September 2003
DOI : 10.1109/JSTQE.2003.819515
Copyright Disclaimer : © 2003 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords : Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Applied, Engineering, Physics, optical measurement, quantum-well lasers, semiconductor device measurement, semiconductor lasers, spontaneous emission, TEMPERATURE-DEPENDENCE, SEMICONDUCTOR-LASERS, ALLOYS, BAND, GAAS, GAAS1-XNX, LAYER, EDGE
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:06
Last Modified : 16 Jan 2019 16:18

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800